Organo metallic vapor phase epitaxy, also known as MOCVD, is a primary technique to grow thin film III-V compound semiconductors such as gallium nitride (GaN), gallium arsenide (GaAs), and indium phosphide (InP) based materials. These materials are used in devices such as light-emitting diodes, solid-state lasers, photovoltaics, IR detectors, and heterojunction bipolar transitors. MOCVD is the critical enabling technology with several advantages including highly uniform thickness, excellent repeatability, low maintenance, high throughput and low cost of ownership. Fluent's CFD software combines physically accurate transport models with proposed gas-phase and surface chemistry mechanisms, and predicts uniformity of film thickness and composition variation during selective growth.

Flow path lines, concentrations of AsH3, GaAs deposition on a substrate in a MOCVD system.
Courtesy of Emcore Corporation